Free tool · no sign-inLiveFree
GaN Analytics
Every GaN device, IC and evaluation board on the market, from every vendor, compared on the metrics datasheets bury.
- 1,169 parts tracked: 612 GaN HEMTs, 352 GaN ICs, 205 evaluation boards.
- 15 vendors, including EPC, Infineon, Innoscience, Navitas and onsemi.
- 105 discrete GaN HEMTs rated 100 V, the voltage class for 48–60 V motor buses.
- Lowest Rds(on) at 100 V: 0.75 mΩ typical, 1 mΩ max (EPC2361).
- Best 100 V figure of merit, Rds(on) × Qg: 17.5 mΩ·nC (ST SGT1D5R10MEA).
Every GaN device, IC and evaluation board on the market, from every vendor, compared on the metrics datasheets bury.
| Device | Vendor | Rds(on) typ, mΩ | Qg, nC | Rds(on)·Qg, mΩ·nC | Package |
|---|---|---|---|---|---|
| SGT1D5R10MEA | ST Microelectronics | 1.1 | 15.9 | 17.5 | PowerVDFN 8L (En-FCLGA 5x6) |
| SGT3D5R10MEB | ST Microelectronics | 2.9 | 6.3 | 18.3 | PowerVDFN 9L (En-FCLGA 3.3x3.3) |
| EPC2367 | EPC | 1.2 | 17 | 20.4 | QFN 3.3 x 3.3 |
| INN100EBD025DAD | Innoscience | 1.9 | 11 | 20.9 | En-FCLGA 5X6 |
| INN100EBD018DAD | Innoscience | 1.1 | 19 | 20.9 | En-FCLGA 5X6 |
| EPC2361 | EPC | 0.75 | 28 | 21.0 | QFN 3 x 5 |
| INN100EBD050DAD | Innoscience | 3.8 | 5.7 | 21.7 | En-FCLGA 5X6 |
| INN100EA050DAD | Innoscience | 3.8 | 5.7 | 21.7 | En-FCLGA 3.3X3.3 |
| INN100EA035A | Innoscience | 2.9 | 7.6 | 22.0 | En-FCLGA 3.3X3.3 |
| INN100EBD035DAD | Innoscience | 2.9 | 7.7 | 22.3 | En-FCLGA 5X6 |
Built by the team behind the ulna-60-25.
GaN servo drive
ulna-60-25
A 60 V, 25 A peak three-phase GaN servo drive built around the STM32G431, three EPC23102 GaN half-bridges and a 14-bit MA732 magnetic encoder. Sensored FOC at 100 kHz PWM with 20 ns dead time, CAN FD. Ships with our telemetry software,...
$349.00
USD
Sold out