Notebook
Bring-up logs, root-cause write-ups and the GaN-over-silicon thesis, written for engineers who want the schematic, not the slogan.
Thin Epi Makes 300 mm GaN a Low Voltage Story
Infineon's 1.1 billion euro 300 mm GaN line in Villach starts production by the end of 2027. The parts easiest to make...
Missing Kelvin Taps Cost 16% of Shunt Gain
Two identical shunt amplifier channels on Ulna-60-30 V1.2 read 25.6 and 22.0 mV/A, a 16 percent spread, because the sense taps share...
Gate Driver Placement in Joint Inverters
On a circular joint PCB, three single half bridge gate drivers beat one three phase driver, and the reason is trace length...
Latency Budgets for a Daisy Chained Arm
Ten times the bandwidth can cost you eight times the PHY latency. That result, from TI's characterisation of single pair Ethernet PHYs,...
Current Sense Sets GaN Switching Speed
In a 48 V GaN joint drive, the limit on edge rate is usually the phase current measurement, not the transistor.
GaN vs Silicon in 48 V BLDC Drives
Switching loss is about a quarter of motor power in a silicon joint drive, GaN takes most of it back, and a...
GaN in Robot Joints Is About Switching Frequency
The case for GaN in humanoid actuators is usually made wrong. It is presented as an efficiency story, and efficiency is the...
300+ GaN Devices in One Humanoid Robot
Power density is the binding constraint in a humanoid actuator, and the first per robot GaN chip count we have seen in...
Humanoid Market: GaN Demand by BOM Block
A market that grows from under a billion dollars to fifty one billion in a decade is not a market for GaN....